- 您现在的位置：买卖IC网 > Sheet目录238 > NUP4201MR6T1 (ON Semiconductor)IC TVS DIODE ARRAY HS LINE 6TSOP
NUP4201MR6
Power
Supply
V CC
I ESDpos
inductance will provide significant benefits in transient
immunity.
Even with good board layout, some disadvantages are still
present when discrete diodes are used to suppress ESD
Protected Data Line
Device
D1
D2
I ESDpos
I ESDneg
VF + V CC
I ESDneg
events across datalines and the supply rail. Discrete diodes
with good transient power capability will have larger die and
therefore higher capacitance. This capacitance becomes
problematic as transmission frequencies increase. Reducing
capacitance generally requires reducing die size. These
small die will have higher forward voltage characteristics at
? VF
Looking at the figure above, it can be seen that when a
positive ESD condition occurs, diode D1 will be forward
biased while diode D2 will be forward biased when a
negative ESD condition occurs. For slower transient
conditions, this system may be approximated as follows:
For positive pulse conditions:
typical ESD transient current levels. This voltage combined
with the smaller die can result in device failure.
The ON Semiconductor NUP4201MR6 was developed to
overcome the disadvantages encountered when using
discrete diodes for ESD protection. This device integrates a
TVS diode within a network of steering diodes.
Vc = V CC + Vf D1
For negative pulse conditions:
Vc = ? Vf D2
ESD events can have rise times on the order of some
number of nanoseconds. Under these conditions, the effect
D1
D2
D3
D4
D5
D6
D7
D8
of parasitic inductance must be considered. A pictorial
representation of this is shown below.
Power
Supply
V CC
I ESDpos
0
Figure 9. NUP4201MR6 Equivalent Circuit
Protected
Device
Data Line
D1
I ESDpos
I ESDneg
During an ESD condition, the ESD current will be driven
to ground through the TVS diode as shown below.
D2
V C = V CC + Vf + (L diESD/dt)
I ESDneg
Power
Supply
V CC
V C = ? Vf ? (L diESD/
dt)
An approximation of the clamping voltage for these fast
transients would be:
For positive pulse conditions:
Protected
Device
Data Line
D1
D2
I ESDpos
Vc = V CC + Vf + (L di ESD /dt)
For negative pulse conditions:
Vc = ? Vf – (L di ESD /dt)
As shown in the formulas, the clamping voltage (Vc) not
only depends on the Vf of the steering diodes but also on the
L d iESD /dt factor. A relatively small trace inductance can
result in hundreds of volts appearing on the supply rail. This
endangers both the power supply and anything attached to
that rail. This highlights the importance of good board
layout. Taking care to minimize the effects of parasitic
The resulting clamping voltage on the protected IC will
be:
Vc = VF + V TVS .
The clamping voltage of the TVS diode is provided in
Figure 8 and depends on the magnitude of the ESD current.
The steering diodes are fast switching devices with unique
forward voltage and low capacitance characteristics.
http://onsemi.com
6
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
NUP4202W1T2G
IC TVS ARRAY HS DATALINE SOT-363
NUP4212UPMUTAG
TVS QUAD ARRAY LOW CAP 6-UDFN
NUP4302MR6T1
IC DIODE ARRAY SCHOTTKY TSOP6
NUP4304MR6T1
IC DIODE ARRAY LO CAP ESD SC74-6
NUP45V6P5T5G
TVS QUAD ARRAY LOW CAP SOT-953
NUP46V8P5T5G
TVS QUAD ARRAY LOW CAP SOT-953
NUP5120X6T2G
IC TVS ARRAY 5LINE SOT-563
NUP5150MUTBG
IC TVS ARRAY 5LINE ESD 6-UDFN
相关代理商/技术参数
NUP4201MR6T1G
功能描述:TVS二极管阵列 Low Cap. TVS Array Hi Spd Data Protect RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C
NUP4201MR6T1G
制造商:ON Semiconductor 功能描述:TVS DIODE ARRAY 500W 5V TSOP 制造商:ON Semiconductor 功能描述:TVS DIODE ARRAY, 500W, 5V, TSOP
NUP4201MR6T1G-CUT TAPE
制造商:ON 功能描述:NUP4201MR6 Series 6 V 500 W Unidirectional Transient Voltage Suppressor
NUP4202
制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Low cap. diode array for 2 Line High Speed USB protection devic
NUP4202W1
制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Transient Voltage Suppressors
NUP4202W1_09
制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Transient Voltage Suppressors
NUP4202W1T2G
功能描述:TVS二极管阵列 LOW CAP DIODE TVS ARRAY RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C
NUP4212UPMU
制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Quad Transient Voltage Suppressor Array
